Advanced GaN Packaging (AGAPAC)
Advanced GaN Packaging (AGAPAC) is a 3-year research project launched in October 2008 and supported by the European Commission under the Seventh Framework Programme (Space) . AGAPAC is a Specific Targeted Research Project (STReP) coordinated by Thales Alenia Space and focusing on the establishment of a space-compatible European supply chain for packaging solutions of GaN HEMTs and GaN MMICs by 2010/11. This is identified on the European Space Agency roadmap for GaN component strategy.
AbOUT AGAPAC
Gallium Nitride (GaN) technology has recently made a remarkable breakthrough in the world of microwave electronics with the announcement of commercially available transistors from 5W to 180W at microwave frequencies. Originating from a major industrial transistor vendor in Japan but also from the US, equipment manufacturers and especially those related to space applications strongly believe that time has now come for a rapid insertion of GaN electronics into their systems. Apart from the reliability concerns that still need to be addressed and the present lack of a European source for GaN electronics, these GaN power transistors will roughly increase power density by more than an order of magnitude for large devices compared to present solutions (from 0.5 W/mm to 5 W/mm for space applications including de-ratings) .
Consequences will directly impact packaging technology for which the thermal resistance needs to be significantly reduced if the advantages obtained at die level are to be maintained at its highest at the module and equipment level. To address this critical challenge for space satellite applications is the aim of the AGAPAC project. This item is identified on the ESA roadmap for GaN component strategy but is not funded by ESA. The ESA funding is being mainly dedicated toward GaN transistor process optimisation, reliability and industrialization and to build up a European GaN transistor device supply chain.
Expected Impacts
The expected impact is to ProgresS towards the sustainable provision of packaging technologies suitable for GaN technologies needed by the European space community in order to become independent from non-EU manufacturers .
The project is important in European terms based on the fact that the market for GaN transistors is expected to have a strong growth, with main turnover in 3G base station, satcom, and military. This project targets packaging for space applications to enable Europe to maintain a strong position in the highly competitive space industry .
The work will benefit European citizens due to the involvement of “High tech” SMEs together with large industrial groups will trigger innovation at European level. In addition, it will ensure new employment opportunities for Europe, as AGAPAC targets enable technologies for next generation space systems.
Forecasters predict that the market for GaN microelectronic devices will grow at a CAGR of 98% through to 2012, with military applications accounting for 55% of GaN device demand, followed by demand from the wireless infrastructure market. Despite improvements in silicon substrate technologies, predictions are that SiC will remain the mainstay as a substrate technology for GaN devices .
See also
- Seventh Framework Programme
- STReP
- Electronic packaging
- Electronic package
- Gallium Nitride
- GaN
- Thermal conductivity
- Heatsink
- Thales Alenia Space
- CNES
- University of Bristol
- PLANSEE